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Silicon Switching Diode Array
q
BAW 101
Electrically insulated high-voltage medium-speed diodes
Type BAW 101
Marking JPs
Ordering Code (tape and reel) Q62702-A712
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, TS 35 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VR VRM IF IFM IFS Ptot Tj Tstg
Values 300 300 250 500 4.5 350 150 - 65 ... + 150
Unit V mA A mW C
470 330
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BAW 101
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 100 mA Reverse current VR = 250 V VR = 250 V, TA = 150 C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Test circuit for reverse recovery time CD trr - - 6 1 - - pF
s
Values typ. max.
Unit
V(BR) VF IR
300 -
- -
- 1.3
V
- -
- -
150 50
nA
A
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
Semiconductor Group
2
BAW 101
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Forward current IF = f (VF) TA = 25 C
Reverse current IR = f (TA)
Semiconductor Group
3

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